2SB1201T-E vs 2SB1202T-E

Product Attributes

Part Number 2SB1201T-E 2SB1202T-E
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2SB1201T-E 2SB1202T-E
Product Status Active Obsolete
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 2 A 3 A
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 1A 700mV @ 100mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 2V 200 @ 100mA, 2V
Power - Max 800 mW 1 W
Frequency - Transition 150MHz 150MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TP TP