2SB1124T-TD-E vs 2SB1124S-TD-E

Product Attributes

Part Number 2SB1124T-TD-E 2SB1124S-TD-E
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2SB1124T-TD-E 2SB1124S-TD-E
Product Status Obsolete Obsolete
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 100mA, 2A 700mV @ 100mA, 2A
Current - Collector Cutoff (Max) 1µA (ICBO) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 2V 140 @ 100mA, 2V
Power - Max 500 mW 500 mW
Frequency - Transition 150MHz 150MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA
Supplier Device Package PCP PCP