2SB1124T-TD-E vs 2SB1123T-TD-E

Product Attributes

Part Number 2SB1124T-TD-E 2SB1123T-TD-E
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2SB1124T-TD-E 2SB1123T-TD-E
Product Status Obsolete Active
Transistor Type PNP -
Current - Collector (Ic) (Max) 3 A -
Voltage - Collector Emitter Breakdown (Max) 50 V -
Vce Saturation (Max) @ Ib, Ic 700mV @ 100mA, 2A -
Current - Collector Cutoff (Max) 1µA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 2V -
Power - Max 500 mW -
Frequency - Transition 150MHz -
Operating Temperature 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case TO-243AA -
Supplier Device Package PCP -