| Part Number | 2SA2013-TD-E | 2SA2016-TD-E |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Active |
| Transistor Type | PNP | PNP |
| Current - Collector (Ic) (Max) | 4 A | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 340mV @ 100mA, 2A | 400mV @ 40mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V | 200 @ 500mA, 2V |
| Power - Max | 3.5 W | 3.5 W |
| Frequency - Transition | 400MHz | 330MHz |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-243AA | TO-243AA |
| Supplier Device Package | PCP | PCP |