| Part Number | 2SA2014-TD-E | 2SA2012-TD-E |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Active |
| Transistor Type | - | PNP |
| Current - Collector (Ic) (Max) | - | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | - | 30 V |
| Vce Saturation (Max) @ Ib, Ic | - | 210mV @ 30mA, 1.5A |
| Current - Collector Cutoff (Max) | - | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - | 200 @ 500mA, 2V |
| Power - Max | - | 3.5 W |
| Frequency - Transition | - | 420MHz |
| Operating Temperature | - | 150°C (TJ) |
| Mounting Type | - | Surface Mount |
| Package / Case | - | TO-243AA |
| Supplier Device Package | - | PCP |