2SA2015-TD-E vs 2SA2012-TD-E

Product Attributes

Part Number 2SA2015-TD-E 2SA2012-TD-E
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2SA2015-TD-E 2SA2012-TD-E
Product Status Active Active
Transistor Type - PNP
Current - Collector (Ic) (Max) - 5 A
Voltage - Collector Emitter Breakdown (Max) - 30 V
Vce Saturation (Max) @ Ib, Ic - 210mV @ 30mA, 1.5A
Current - Collector Cutoff (Max) - 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce - 200 @ 500mA, 2V
Power - Max - 3.5 W
Frequency - Transition - 420MHz
Operating Temperature - 150°C (TJ)
Mounting Type - Surface Mount
Package / Case - TO-243AA
Supplier Device Package - PCP