| Part Number | 2SA2013-TD-E | 2SA2011-TD-E |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Active |
| Transistor Type | PNP | - |
| Current - Collector (Ic) (Max) | 4 A | - |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | - |
| Vce Saturation (Max) @ Ib, Ic | 340mV @ 100mA, 2A | - |
| Current - Collector Cutoff (Max) | 1µA (ICBO) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V | - |
| Power - Max | 3.5 W | - |
| Frequency - Transition | 400MHz | - |
| Operating Temperature | 150°C (TJ) | - |
| Mounting Type | Surface Mount | - |
| Package / Case | TO-243AA | - |
| Supplier Device Package | PCP | - |