2SA1977-T1B-A vs 2SA1978-T1B-A

Product Attributes

Part Number 2SA1977-T1B-A 2SA1978-T1B-A
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
2SA1977-T1B-A 2SA1978-T1B-A
Product Status Obsolete Obsolete
Transistor Type PNP PNP
Voltage - Collector Emitter Breakdown (Max) 12V 12V
Frequency - Transition 8.5GHz 5.5GHz
Noise Figure (dB Typ @ f) 1.5dB @ 1GHz 2dB @ 1GHz
Gain 12dB 10dB
Power - Max 200mW 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 20mA, 8V 20 @ 15mA, 10V
Current - Collector (Ic) (Max) 50mA 50mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT23-3 (TO-236) SOT23-3 (TO-236)