2SA1179-6-TB-E vs 2SA1179N6-TB-E

Product Attributes

Part Number 2SA1179-6-TB-E 2SA1179N6-TB-E
Manufacturer Sanyo onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2SA1179-6-TB-E 2SA1179N6-TB-E
Product Status Active Obsolete
Transistor Type - PNP
Current - Collector (Ic) (Max) - 150 mA
Voltage - Collector Emitter Breakdown (Max) - 50 V
Vce Saturation (Max) @ Ib, Ic - 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) - 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce - 135 @ 1mA, 6V
Power - Max - 200 mW
Frequency - Transition - 180MHz
Operating Temperature - 150°C (TJ)
Mounting Type - Surface Mount
Package / Case - TO-236-3, SC-59, SOT-23-3
Supplier Device Package - 3-CP