2SA1052MCTR-E vs 2SA1052MDTR-E

Product Attributes

Part Number 2SA1052MCTR-E 2SA1052MDTR-E
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2SA1052MCTR-E 2SA1052MDTR-E
Product Status Active Active
Transistor Type - PNP
Current - Collector (Ic) (Max) - 100 mA
Voltage - Collector Emitter Breakdown (Max) - 30 V
Vce Saturation (Max) @ Ib, Ic - 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max) - 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce - 250 @ 2mA, 12V
Power - Max - 150 mW
Frequency - Transition - -
Operating Temperature - 150°C (TJ)
Mounting Type - Surface Mount
Package / Case - TO-236-3, SC-59, SOT-23-3
Supplier Device Package - 3-MPAK