| Part Number | 2PD602AS,115 | 2PD602AR,115 |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Obsolete | Obsolete |
| Transistor Type | NPN | NPN |
| Current - Collector (Ic) (Max) | 500 mA | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 170 @ 150mA, 10V | 120 @ 150mA, 10V |
| Power - Max | 250 mW | 250 mW |
| Frequency - Transition | 180MHz | 160MHz |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SMT3; MPAK | SMT3; MPAK |