| Part Number | 2N6760 | 2N6790 |
|---|---|---|
| Manufacturer | Harris Corporation | Microsemi Corporation |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Active | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 400 V | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) | 3.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 1.22Ohm @ 5.5A, 10V | 800mOhm @ 2.25A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V | 14.3 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | - | - |
| FET Feature | - | - |
| Power Dissipation (Max) | 4W (Ta), 75W (Tc) | 800mW (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-204AA | TO-39 |
| Package / Case | TO-204AA, TO-3 | TO-205AF Metal Can |