Part Number | 2N6786 | 2N6788 |
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Manufacturer | Harris Corporation | Microsemi Corporation |
Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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Product Status | Active | Obsolete |
FET Type | N-Channel | N-Channel |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 400 V | 100 V |
Current - Continuous Drain (Id) @ 25°C | 1.25A (Tc) | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
Rds On (Max) @ Id, Vgs | 3.7Ohm @ 1.25A, 10V | 300mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | 18 nC @ 10 V |
Vgs (Max) | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V | - |
FET Feature | - | - |
Power Dissipation (Max) | 15W (Tc) | 800mW (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Through Hole |
Supplier Device Package | TO-205AF (TO-39) | TO-39 |
Package / Case | TO-205AF Metal Can | TO-205AF Metal Can |