2N6786 vs 2N6766

Product Attributes

Part Number 2N6786 2N6766
Manufacturer Harris Corporation Microsemi Corporation
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
2N6786 2N6766
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 200 V
Current - Continuous Drain (Id) @ 25°C 1.25A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3.7Ohm @ 1.25A, 10V 90mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 115 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 170 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 15W (Tc) 4W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-205AF (TO-39) TO-3
Package / Case TO-205AF Metal Can TO-204AE