| Part Number | 2N6761 | 2N6766 |
|---|---|---|
| Manufacturer | Harris Corporation | Microsemi Corporation |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Active | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 450 V | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 2.5A, 10V | 90mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | - | 115 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V | - |
| FET Feature | - | - |
| Power Dissipation (Max) | 75W (Tc) | 4W (Ta), 150W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-3 | TO-3 |
| Package / Case | TO-204AA, TO-3 | TO-204AE |