| Part Number | 2N6666 | 2N6676 |
|---|---|---|
| Manufacturer | NTE Electronics, Inc | Microchip Technology |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Active |
| Transistor Type | PNP - Darlington | - |
| Current - Collector (Ic) (Max) | 8 A | - |
| Voltage - Collector Emitter Breakdown (Max) | 40 V | - |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 80mA, 8A | - |
| Current - Collector Cutoff (Max) | 1mA | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 3A, 3V | - |
| Power - Max | 65 W | - |
| Frequency - Transition | - | - |
| Operating Temperature | -65°C ~ 150°C (TJ) | - |
| Mounting Type | Through Hole | - |
| Package / Case | TO-220-3 | - |
| Supplier Device Package | TO-220 | - |