| Part Number | 2N6667 | 2N6667G |
|---|---|---|
| Manufacturer | NTE Electronics, Inc | onsemi |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Obsolete |
| Transistor Type | PNP - Darlington | PNP - Darlington |
| Current - Collector (Ic) (Max) | 10 A | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A | 3V @ 100mA, 10A |
| Current - Collector Cutoff (Max) | 1mA | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 3V | 1000 @ 5A, 3V |
| Power - Max | 2 W | 2 W |
| Frequency - Transition | - | - |
| Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Supplier Device Package | TO-220 | TO-220 |