2N6661 vs 2N6660

Product Attributes

Part Number 2N6661 2N6660
Manufacturer Microchip Technology Microchip Technology
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
2N6661 2N6660
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 90 V 60 V
Current - Continuous Drain (Id) @ 25°C 350mA (Tj) 410mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 4Ohm @ 1A, 10V 3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 24 V 50 pF @ 24 V
FET Feature - -
Power Dissipation (Max) 6.25W (Tc) 6.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-39 TO-39
Package / Case TO-205AD, TO-39-3 Metal Can TO-205AD, TO-39-3 Metal Can