2N6491G vs 2N6497G

Product Attributes

Part Number 2N6491G 2N6497G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2N6491G 2N6497G
Product Status Active Obsolete
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 15 A 5 A
Voltage - Collector Emitter Breakdown (Max) 80 V 250 V
Vce Saturation (Max) @ Ib, Ic 3.5V @ 5A, 15A 5V @ 2A, 5A
Current - Collector Cutoff (Max) 1mA -
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A, 4V 10 @ 2.5A, 10V
Power - Max 1.8 W 80 W
Frequency - Transition 5MHz 5MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220