2N6491G vs 2N6491

Product Attributes

Part Number 2N6491G 2N6491
Manufacturer onsemi Harris Corporation
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2N6491G 2N6491
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 15 A 15 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 3.5V @ 5A, 15A 3.5V @ 5A, 15A
Current - Collector Cutoff (Max) 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A, 4V 20 @ 5A, 4V
Power - Max 1.8 W 1.8 W
Frequency - Transition 5MHz 5MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220AB