Part Number | 2N6426 | 2N6422 |
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Manufacturer | NTE Electronics, Inc | Microchip Technology |
Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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Product Status | Active | Active |
Transistor Type | NPN - Darlington | PNP |
Current - Collector (Ic) (Max) | 500 mA | 2 A |
Voltage - Collector Emitter Breakdown (Max) | 40 V | 300 V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500µA, 500mA | - |
Current - Collector Cutoff (Max) | 1µA | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30000 @ 100mA, 5V | - |
Power - Max | 625 mW | 35 W |
Frequency - Transition | - | - |
Operating Temperature | -55°C ~ 150°C (TJ) | - |
Mounting Type | Through Hole | Through Hole |
Package / Case | TO-226-3, TO-92-3 Long Body | TO-213AA, TO-66-2 |
Supplier Device Package | TO-92 (TO-226) | TO-66 (TO-213AA) |