2N6052 vs 2N6352

Product Attributes

Part Number 2N6052 2N6352
Manufacturer NTE Electronics, Inc Microchip Technology
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2N6052 2N6352
Product Status Active Active
Transistor Type PNP - Darlington -
Current - Collector (Ic) (Max) 12 A -
Voltage - Collector Emitter Breakdown (Max) 100 V -
Vce Saturation (Max) @ Ib, Ic 3V @ 120mA, 12A -
Current - Collector Cutoff (Max) 1mA -
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 6A, 3V -
Power - Max 150 W -
Frequency - Transition - -
Operating Temperature -65°C ~ 200°C (TJ) -
Mounting Type Through Hole -
Package / Case TO-204AA, TO-3 -
Supplier Device Package TO-204 (TO-3) -