2N6317 vs 2N6517

Product Attributes

Part Number 2N6317 2N6517
Manufacturer Microchip Technology onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2N6317 2N6517
Product Status Active Obsolete
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 7 A 500 mA
Voltage - Collector Emitter Breakdown (Max) 60 V 350 V
Vce Saturation (Max) @ Ib, Ic 2V @ 1.75A, 7A 1V @ 5mA, 50mA
Current - Collector Cutoff (Max) 500µA 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 2.5A, 4V 20 @ 50mA, 10V
Power - Max 90 W 625 mW
Frequency - Transition - 200MHz
Operating Temperature -65°C ~ 200°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-213AA, TO-66-2 TO-226-3, TO-92-3 Long Body
Supplier Device Package - TO-92 (TO-226)