| Part Number | 2N5961 | 2N5962 |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Obsolete | Obsolete |
| Transistor Type | NPN | NPN |
| Current - Collector (Ic) (Max) | 100 mA | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V | 45 V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 500µA, 10mA | 200mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 2nA (ICBO) | 2nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 10mA, 5V | 600 @ 10mA, 5V |
| Power - Max | 625 mW | 625 mW |
| Frequency - Transition | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 | TO-92-3 |