2N5883G vs 2N5886G

Product Attributes

Part Number 2N5883G 2N5886G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2N5883G 2N5886G
Product Status Obsolete Obsolete
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 25 A 25 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 4V @ 6.25A, 25A 4V @ 6.25A, 25A
Current - Collector Cutoff (Max) 2mA 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10A, 4V 20 @ 10A, 4V
Power - Max 200 W 200 W
Frequency - Transition 4MHz 4MHz
Operating Temperature -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-204AA, TO-3 TO-204AA, TO-3
Supplier Device Package TO-204 (TO-3) TO-204 (TO-3)