Part Number | 2N5883G | 2N5886G |
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Manufacturer | onsemi | onsemi |
Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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Product Status | Obsolete | Obsolete |
Transistor Type | PNP | NPN |
Current - Collector (Ic) (Max) | 25 A | 25 A |
Voltage - Collector Emitter Breakdown (Max) | 60 V | 80 V |
Vce Saturation (Max) @ Ib, Ic | 4V @ 6.25A, 25A | 4V @ 6.25A, 25A |
Current - Collector Cutoff (Max) | 2mA | 2mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10A, 4V | 20 @ 10A, 4V |
Power - Max | 200 W | 200 W |
Frequency - Transition | 4MHz | 4MHz |
Operating Temperature | -65°C ~ 200°C (TJ) | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole | Through Hole |
Package / Case | TO-204AA, TO-3 | TO-204AA, TO-3 |
Supplier Device Package | TO-204 (TO-3) | TO-204 (TO-3) |