2N5830 vs 2N5430

Product Attributes

Part Number 2N5830 2N5430
Manufacturer Fairchild Semiconductor NTE Electronics, Inc
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2N5830 2N5430
Product Status Obsolete Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 200 mA 7 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA -
Current - Collector Cutoff (Max) 50nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V -
Power - Max 625 mW 40 W
Frequency - Transition - 30MHz
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) TO-213AA, TO-66-2
Supplier Device Package TO-92-3 TO-66