2N5685 vs 2N5655

Product Attributes

Part Number 2N5685 2N5655
Manufacturer NTE Electronics, Inc onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2N5685 2N5655
Product Status Active Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 50 A 500 mA
Voltage - Collector Emitter Breakdown (Max) 60 V 250 V
Vce Saturation (Max) @ Ib, Ic 5V @ 10A, 50A 10V @ 100mA, 500mA
Current - Collector Cutoff (Max) 1mA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 25A, 2V 30 @ 100mA, 10mV
Power - Max 300 W 20 W
Frequency - Transition 2MHz 10MHz
Operating Temperature -65°C ~ 200°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-204AA, TO-3 TO-225AA, TO-126-3
Supplier Device Package TO-3 TO-126