2N5655 vs 2N5655G

Product Attributes

Part Number 2N5655 2N5655G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2N5655 2N5655G
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 250 V 250 V
Vce Saturation (Max) @ Ib, Ic 10V @ 100mA, 500mA 10V @ 100mA, 500mA
Current - Collector Cutoff (Max) 100µA 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 100mA, 10mV 30 @ 100mA, 10mV
Power - Max 20 W 20 W
Frequency - Transition 10MHz 10MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126