| Part Number | 2N5551 | 2N5581 |
|---|---|---|
| Manufacturer | NTE Electronics, Inc | Microchip Technology |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Active |
| Transistor Type | NPN | NPN |
| Current - Collector (Ic) (Max) | 200 mA | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 160 V | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | - | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V | 40 @ 150mA, 10V |
| Power - Max | 625 mW | 500 mW |
| Frequency - Transition | 300MHz | - |
| Operating Temperature | - | -55°C ~ 200°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-206AB, TO-46-3 Metal Can |
| Supplier Device Package | TO-92 | TO-46 (TO-206AB) |