2N5550TF vs 2N5551TF

Product Attributes

Part Number 2N5550TF 2N5551TF
Manufacturer Fairchild Semiconductor onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2N5550TF 2N5551TF
Product Status Obsolete Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 140 V 160 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA (ICBO) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V 80 @ 10mA, 5V
Power - Max 625 mW 625 mW
Frequency - Transition 300MHz 100MHz
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3