2N5400 vs 2N5400G

Product Attributes

Part Number 2N5400 2N5400G
Manufacturer NTE Electronics, Inc onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2N5400 2N5400G
Product Status Active Obsolete
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 120 V 120 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA, 5V 40 @ 10mA, 5V
Power - Max 625 mW 625 mW
Frequency - Transition 400MHz 400MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92 (TO-226) TO-92 (TO-226)