| Part Number | 2N5192 | 2N5192G |
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| Manufacturer | NTE Electronics, Inc | onsemi |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Active |
| Transistor Type | NPN | NPN |
| Current - Collector (Ic) (Max) | 4 A | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 150mA, 1.5A | 1.4V @ 1A, 4A |
| Current - Collector Cutoff (Max) | 1mA | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1.5A, 2V | 20 @ 1.5A, 2V |
| Power - Max | 40 W | 40 W |
| Frequency - Transition | 2MHz | 2MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 |
| Supplier Device Package | TO-126 | TO-126 |