2N5191G vs 2N5192G

Product Attributes

Part Number 2N5191G 2N5192G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2N5191G 2N5192G
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 1.4V @ 1A, 4A 1.4V @ 1A, 4A
Current - Collector Cutoff (Max) 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1.5A, 2V 20 @ 1.5A, 2V
Power - Max 40 W 40 W
Frequency - Transition 2MHz 2MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126