| Part Number | 2N5089 | 2N5099 |
|---|---|---|
| Manufacturer | NTE Electronics, Inc | Microsemi Corporation |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Obsolete |
| Transistor Type | NPN | NPN |
| Current - Collector (Ic) (Max) | 50 mA | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 25 V | 800 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA | - |
| Current - Collector Cutoff (Max) | 50nA (ICBO) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 100µA, 5V | - |
| Power - Max | 625 mW | 4 W |
| Frequency - Transition | 50MHz | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body | TO-205AA, TO-5-3 Metal Can |
| Supplier Device Package | TO-92 (TO-226) | TO-5 |