| Part Number | 2N5195 | 2N5095 |
|---|---|---|
| Manufacturer | NTE Electronics, Inc | Microsemi Corporation |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Obsolete |
| Transistor Type | PNP | NPN |
| Current - Collector (Ic) (Max) | 4 A | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | 500 V |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 1A, 4A | - |
| Current - Collector Cutoff (Max) | 1mA | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1.5A, 2V | - |
| Power - Max | 40 W | 4 W |
| Frequency - Transition | 2MHz | - |
| Operating Temperature | 150°C (TJ) | - |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-225AA, TO-126-3 | TO-205AA, TO-5-3 Metal Can |
| Supplier Device Package | SOT-32-3 | TO-5 |