| Part Number | 2N5013 | 2N5014 |
|---|---|---|
| Manufacturer | Microsemi Corporation | Microsemi Corporation |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Obsolete | Obsolete |
| Transistor Type | NPN | NPN |
| Current - Collector (Ic) (Max) | 200 mA | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 800 V | 900 V |
| Vce Saturation (Max) @ Ib, Ic | - | - |
| Current - Collector Cutoff (Max) | 10nA (ICBO) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 10V | 30 @ 20mA, 10V |
| Power - Max | 1 W | 1 W |
| Frequency - Transition | - | - |
| Operating Temperature | -65°C ~ 200°C (TJ) | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can | TO-205AA, TO-5-3 Metal Can |
| Supplier Device Package | TO-5 | TO-5 |