Part Number | 2N3962 | 2N3960 |
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Manufacturer | onsemi | Microsemi Corporation |
Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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Product Status | Obsolete | Active |
Transistor Type | PNP | NPN |
Current - Collector (Ic) (Max) | 200 mA | - |
Voltage - Collector Emitter Breakdown (Max) | 60 V | 12 V |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA | 300mV @ 3mA, 30mA |
Current - Collector Cutoff (Max) | 10nA | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V | 60 @ 10mA, 1V |
Power - Max | 360 mW | 400 mW |
Frequency - Transition | - | - |
Operating Temperature | - | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole | Through Hole |
Package / Case | TO-206AA, TO-18-3 Metal Can | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package | TO-18 | TO-18 (TO-206AA) |