2N3962 vs 2N3960

Product Attributes

Part Number 2N3962 2N3960
Manufacturer onsemi Microsemi Corporation
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2N3962 2N3960
Product Status Obsolete Active
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 200 mA -
Voltage - Collector Emitter Breakdown (Max) 60 V 12 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA 300mV @ 3mA, 30mA
Current - Collector Cutoff (Max) 10nA 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V 60 @ 10mA, 1V
Power - Max 360 mW 400 mW
Frequency - Transition - -
Operating Temperature - -65°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18 TO-18 (TO-206AA)