2DB1386R-13 vs 2DB1386Q-13

Product Attributes

Part Number 2DB1386R-13 2DB1386Q-13
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2DB1386R-13 2DB1386Q-13
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 5 A 5 A
Voltage - Collector Emitter Breakdown (Max) 20 V 20 V
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 4A 1V @ 100mA, 4A
Current - Collector Cutoff (Max) 500nA (ICBO) 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 500mA, 2V 120 @ 500mA, 2V
Power - Max 1 W 1 W
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA
Supplier Device Package SOT-89-3 SOT-89-3