2DB1132R-13 vs 2DB1132Q-13

Product Attributes

Part Number 2DB1132R-13 2DB1132Q-13
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2DB1132R-13 2DB1132Q-13
Product Status Active Obsolete
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 32 V 32 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 500nA (ICBO) 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 100mA, 3V 120 @ 100mA, 3V
Power - Max 1 W 1 W
Frequency - Transition 190MHz 190MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA
Supplier Device Package SOT-89-3 SOT-89-3