2DB1182Q-13 vs 2DB1132Q-13

Product Attributes

Part Number 2DB1182Q-13 2DB1132Q-13
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2DB1182Q-13 2DB1132Q-13
Product Status Active Obsolete
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 2 A 1 A
Voltage - Collector Emitter Breakdown (Max) 32 V 32 V
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 1µA (ICBO) 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 3V 120 @ 100mA, 3V
Power - Max 10 W 1 W
Frequency - Transition 110MHz 190MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-243AA
Supplier Device Package TO-252-3 SOT-89-3