Part Number | 2DB1182Q-13 | 2DB1132Q-13 |
---|---|---|
Manufacturer | Diodes Incorporated | Diodes Incorporated |
Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
![]() |
![]() |
|
Product Status | Active | Obsolete |
Transistor Type | PNP | PNP |
Current - Collector (Ic) (Max) | 2 A | 1 A |
Voltage - Collector Emitter Breakdown (Max) | 32 V | 32 V |
Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 1µA (ICBO) | 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 3V | 120 @ 100mA, 3V |
Power - Max | 10 W | 1 W |
Frequency - Transition | 110MHz | 190MHz |
Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-243AA |
Supplier Device Package | TO-252-3 | SOT-89-3 |